Micron Technology Announces Industry-Leading 128 GB DDR5 RDIMM Memory

Micron Technology, Inc. (Nasdaq: MU) has demonstrated its leadership in the industry by introducing its 32Gb monolithic die-based 128 GB DDR5 RDIMM memory. This memory offers exceptional performance of up to 8000 MT/s, making it ideal for data center workloads now and in the future. These high-capacity, high-speed memory modules are designed to meet the needs of various mission-critical applications in data center and cloud environments, including AI, in-memory databases, and efficient processing for multithreaded, multicore count general compute workloads.

Powered by Micron's 1β technology, the 32Gb DDR5 DRAM die-based 128 GB DDR5 RDIMM memory provides several enhancements compared to competitive 3DS through-silicon via (TSV) products. These enhancements include more than 45% improved bit density, up to 24% improved energy efficiency, up to 16% lower latency, and up to a 28% improvement in AI training performance.

"We are proud to establish a new standard for high-capacity, high-speed memory in the data center with Micron's 128 GB DDR5 RDIMMs. These memory modules deliver the necessary memory bandwidth and capacity for increasingly compute-intensive workloads," said Praveen Vaidyanathan, vice president and general manager of Micron's Compute Products Group. "Micron continues to enhance the data center ecosystem by providing early access to our advanced technologies and support in the design and integration of cutting-edge high-capacity memory solutions."

Micron's 32Gb DDR5 memory solution utilizes innovative die architecture choices to achieve leading array efficiency and the densest monolithic DRAM die. Voltage domain and refresh management features optimize the power delivery network, resulting in significant energy efficiency improvements. Additionally, the die-dimension aspect ratio has been optimized to enhance the manufacturing efficiency of the 32Gb high-capacity DRAM die.

By leveraging AI-powered smart manufacturing methods, Micron's 1β process technology node has achieved yield maturity in record time. Micron's 128 GB RDIMMs will be available in platforms capable of 4800 MT/s, 5600 MT/s, and 6400 MT/s in 2024, and they will be designed into future platforms capable of up to 8000 MT/s.

"Our latest 4th Gen AMD EPYC processors will benefit from optimized memory capacity per core with Micron's 128 GB RDIMMs. These RDIMMs, which use 32Gb monolithic DRAM, provide an improved total cost of ownership solution for business-critical data enterprise workloads, such as AI, high-performance computing, and virtualization," said Dan McNamara, senior vice president and general manager of the Server Business Unit at AMD. "As AMD advances compute with our next-gen EPYC processors, Micron's 128 GB RDIMMs will likely become one of the main memory options to deliver high-capacity and bandwidth per core capabilities to address the demands of memory-intensive applications."

"We are excited about Micron's 32Gb-based 128 GB RDIMM and the benefits it offers in terms of bandwidth and performance-per-watt in the server and AI systems market. Intel is evaluating this 32Gb memory offering for key DDR5 server platforms based on the resulting total cost of ownership benefits for cloud, AI, and enterprise customers," said Dr. Dimitrios Ziakas, vice president of Intel's Memory and IO Technologies.

Micron's 32Gb-DRAM die enables future expansion of the memory portfolio, including enhanced bandwidth and energy-efficient MCRDIMM and JEDEC standard MRDIMM products in 128 GB, 256 GB, and higher capacity solutions. With industry-leading process and design technology innovations, Micron offers a wide range of memory options across RDIMMs, MCRDIMMs, MRDIMMs, CXL, and LP form factors, allowing customers to integrate optimized solutions for AI and high-performance computing (HPC) applications that meet their specific needs for bandwidth, capacity, and power optimization. For more information, visit Micron's DDR5 webpage.